 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT4124SPT CURRENT 200 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. 1.2~1.4 (1) (6) SC-88/SOT-363 0.65 0.65 2.0~2.2 CONSTRUCTION * Two internal isolated NPN transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 MARKING * CS 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. 30 25 5 200 200 +150 150 +150 V V V mA mW C C C 2004-11 UNIT RATING CHARACTERISTIC CURVES ( CHT4124SPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain DC current gain collector-emitter saturation base-emitter saturation voltage output capacitance input capacitance transition frequency CONDITIONS IC = 10uA ; IE = 0A IC = 1mA ; IB = 0A IE = 10uA ; IC = 0A IE = 0; VCB = 20 V IC = 0; VEB = 3 V I IC = 50 mA; VCE = 1V; note 3 IC = 2 mA; VCE = 1V IC = 50 mA; IB = 5 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IE = ie = 0; VCB = 5 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz MIN. 30 25 5 - - 60 120 - - - - 300 - - - 50 50 - 360 300 950 4 8 - mV mV pF pF MHz MAX. V V V nA nA UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE hFE VCEsat VBEsat Cobo Cibo fT Note 3. Pulse test: tp 300 s; 0.02. RATING CHARACTERISTIC CURVES ( CHT4124SPT ) Typical Characteristics 500 400 125 C V CE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.15 = 10 125 C 300 25 C 0.1 25 C 200 100 0 0.1 - 40 C 0.05 - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 - 40 C 25 C 0.6 125 C 0.6 125 C 0.4 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 10 Capacitance vs Reverse Bias Voltage f = 1.0 MHz 100 10 1 0.1 VCB = 30V 5 4 3 2 C obo C ibo 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT4124SPT ) Typical Characteristics Noise Figure vs Frequency 12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 I C = 100 A, R S = 500 Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) I C = 1.0 mA I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200 V CE = 5.0V 10 I C = 5.0 mA 8 6 4 2 0 0.1 I C = 50 A I C = 100 A 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( k ) 100 Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 h fe PD - POWER DISSIPATION (W) Power Dissipation vs Ambient Temperature 0 20 40 60 80 100 120 140 160 180 1000 1 - CURRENT GAIN (dB) - DEGREES 0.75 0.5 h V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) fe 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 Turn-On Time vs Collector Current 500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Ic 10 Rise Time vs Collector Current 500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 = Ic 10 100 T J = 125C T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 |
Price & Availability of CHT4124SPT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |